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| 특허명 |
Generation of Highly N-type, Defect Passivated Transition Metal Oxides Using Plasma Fluorine Insertion |
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| 발명자 |
Baker, L. Robert; Seo, Hyungtak; Hervier, Antoine C.; Somorjai, Gabor A |
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| 특허구분 |
등록(국외) |
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| 특허(출원)번호 |
US 9,312,342 B2 |
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| 특허일 |
2016.04.12 |
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| 첨부파일 |
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“ Generation of Highly N-type, Defect Passivated Transition Metal Oxides Using Plasma Fluorine Insertion”
Baker, L. Robert; Seo, Hyungtak; Hervier, Antoine C.; Somorjai, Gabor A
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