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아주대학교 광전자재료 연구실 로고
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1. Tailoring Oxide Electronic Devices (TFT, Didoes) by Photochemical Doping and High-Mobility Channel

Tailoring Oxide Electronic Devices (TFT, Didoes) by Photochemical Doping and High-Mobility Channel

Tremendous researches to improve the mobility and stability of oxide semiconductors are being continued for the successful integration of oxides to transparent and flexible electronic devices (TFT, Diodes). We initiated and developed photochemical H-doping,
which produces high-mobility channels and large-extent tunability of conductivity (in the range of 1010) and are performing to clarify the doping mechanism. Our target oxides under study are TiO2, In2O3, ZnO, SnO, CuO, and IGZO and the ultimate goal is to achieve high performance devices fabrication using photochemically doped oxides using in-depth structural, electrical, chemical analyses.

Further Readings
“Permanent Optical Doping of Amorphous Metal Oxide Semiconductors by Deep Ultraviolet Irradiation at Room Temperature”, Appl. Phys. Lett. 96, 222101-1~3 (2010) "A study on H2 plasma treatment effect on a-IGZO thin film transistor”, J. Mat. Res. 27(17), 2318-2325 (2012). "Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping”, Nanoscale Res. Lett 9:619 (2014). “Photochemical Hydrogen Doping Induced Embedded Two-Dimensional Metallic Channel Formation in InGaZnO at Room Temperature”, ACS Nano 9, 10, 9964-9973 (2015)

2. 2D Semiconductor and Devices

2D Semiconductor and Devices

As channel materials in next generation transistors, two-dimensional materials such as Graphene and chalcogenide are potentially considered. Especially, two-dimensional oxide is highlighted as a material class free of toxicity that chalcogenides have. We are researching the synthesis and characterization of two dimensional oxide, chalcogenide nanosheets, and SL-graphene semiconductor and their diodes/TFTs by functionalization with finely tuned gas-phase and low-energy ion dopants. low-energy ion doping technology

Further Readings
“Generation of Highly n-Type Titanium Oxide Using Plasma Fluorine Insertion”, Nano Lett. 11, 751-756 (2011). “Tuning the Electronic Structure of Tin Sulfides Grown by Atomic Layer Deposition”, ACS Appl. Mat & Int. 5(18), 8889-8896 (2013) “Mulit-resistive Reduced Graphene Oxide Diode with Reversible Surface Electrochemical Reaction induced Carrier Control”, Sci. Rep. 4:5642 (2014) “Visible Photocurrent in Chemically Doped TiO2-Based Schottky Diodes”, J. Am. Ceram. Soc. 98[8], 2470-2475. (2015)

3. Next Generation IC Devices (Neuromorphic Synapse Memory and High-k Gate Stacks)

Next Generation IC Devices (Neuromorphic Synapse Memory and High-k Gate Stacks)

As the dimension of IC devices is continuously scale down, the physical limitation of materials used in the conventional IC device is apparent. This renders challenging tasks for characterization on band electronic properties of intrinsic materials and heterointerface at the ultrathin scale. We are currently developing the analytic method for ultrathin interfacial band electronic structure of dynamic random access memory (DRAM) using XPS, UPS, and Internal photoemission spectroscopy (IPS). Especially, IPS is a technique to analyze the Schottky barrier using photon energy at the device level. We are also developing next generation resistive random access memory (ReRAM) and Neuromorphic memory using doped oxide systems.

Further Readings
“Reversible Bistability of Nanoscale Conductance on Single Layer Graphene/Oxide Junction”, Appl. Phys. Lett. 100, 123101 (2012) “Reversible Oxidation States of Single Layer Graphene Tuned by Electrostatic Potential”, Suf. Sci. 612, 37-41 (2013) “Resistive switching of a TaOx/TaON double layer via ionic control of carrier tunneling”, Appl. Phys. Lett. 104, 151603 (2014) “Detection of oxygen ion drift in Pt/Al2O3/TiO2/Pt RRAM using interface-free single-layer graphene electrodes”, Carbon, 75, 209-216 (2014) “Stabilzed resistive switching behaviors of a Pt/TaOx/TiN RRAM under different oxygen contents”, Phys. Status Solidi A. 211, 9, 2189-2194 (2014) “Spatially confined electric field effect for improved resistive switching behavior of a Ni/Ta-embedded TaOx/NiSi device”, RSC Adv. 4, 61064-61067 (2014) “Depth resolved band alignments of ultrathin TiN/ZrO2 and TiN/ZrO2-Al2O3-ZrO2 dynamic random access memory capacitors”, Appl. Phys. Lett. 105, 201603 (2014) "Resistive switching behaviors of Cu/TaOx/TiN device with combined oxygen vacancy/copper conductive filaments", Current. Appl. Phys. 15, 1005-1009 (2015) "Effects of the radio-frequency sputtering power of an MgO tunneling barrier on the tunneling magneto-resistance ratio for Co2Fe6B2/MgO-based perpendicular-magnetic tunnel junctions” , J. Mater. Chem. C, 4, 135-141 (2015)
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